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Synthesis, Structure, and Properties of Boron‐ and Nitrogen‐Doped Graphene
Leela S. Panchakarla, K. S. Subrahmanyam, Subhankar Saha, A. Govindaraj, H. R. Krishnamurthy, Umesh V. Waghmare, Cnr Rao (2009). Synthesis, Structure, and Properties of Boron‐ and Nitrogen‐Doped Graphene. Advanced Materials, 21(46), pp. 4726-4730, DOI: 10.1002/adma.200901285.
Article262 days agoMonitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor
Anindya Das, Simone Pisana, Banani Chakraborty, S. Piscanec, Subhankar Saha, Umesh V. Waghmare, Konstantin ‘kostya’ Novoselov, H. R. Krishnamurthy, A. K. Geǐm, Andrea C. Ferrari, Anil K. Sood (2008). Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor. Nature Nanotechnology, 3(4), pp. 210-215, DOI: 10.1038/nnano.2008.67.
Article258 days agoSynthesis, Structure and Properties of Boron and Nitrogen Doped Graphene
Leela S. Panchakarla, K. S. Subrahmanyam, Subhankar Saha, A. Govindaraj, H. R. Krishnamurthy, Umesh V. Waghmare, Cnr Rao (2009). Synthesis, Structure and Properties of Boron and Nitrogen Doped Graphene. arXiv (Cornell University), DOI: 10.48550/arxiv.0902.3077.
Preprint225 days ago