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Get Free AccessAl/sub 2/O/sub 3/-ZrO/sub 2/ composite films were prepared on silicon-on-insulator (SOI) substrate by ultra-high vacuum electron-beam co-evaporation. The crystallization temperature, microstructures and surface morphology of the films during high temperature rapid thermal annealing (RTA) in N/sub 2/ ambient were studied by x-ray diffraction (XRD), transmission electron microscopy (TEM) and atomic force microscopy (AFM). The amorphous structure of the Al/sub 2/O/sub 3/-ZrO/sub 2/ film is maintained up to a post-annealing temperature of 900/spl deg/C and the expansion of the interfacial layer at high temperature is suppressed. Moreover, the current-voltage characteristic was measured with an Al/Al/sub 2/O/sub 3/-ZrO/sub 2//Si MIS structure fabricated on the films, and the result indicates excellent leakage current properties.
Ming Zhu, P. Chen, Ricky K.Y. Fu, W.L. Liu, Chih-Huang Lin, Paul Kim Ho Chu (2004). Structural and electrical properties of Al/sub 2/O/sub 3/-ZrO/sub 2/ gate dielectrics on silicon-on-insulator. , DOI: https://doi.org/10.1109/iwjt.2004.1306859.
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Type
Article
Year
2004
Authors
6
Datasets
0
Total Files
0
Language
en
DOI
https://doi.org/10.1109/iwjt.2004.1306859
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