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  5. Mechanism of fatigue in micron-scale films of polycrystalline silicon for microelectromechanical systems

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Article
English
2002

Mechanism of fatigue in micron-scale films of polycrystalline silicon for microelectromechanical systems

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English
2002
Applied Physics Letters
Vol 80 (9)
DOI: 10.1063/1.1455142

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Robert O. Ritchie
Robert O. Ritchie

University of California, Berkeley

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Christopher L. Muhlstein
E.A. Stach
Robert O. Ritchie

Abstract

Reported nearly a decade ago, cyclic fatigue failure in silicon thin films has remained a mystery. Silicon does not display the room-temperature plasticity or extrinsic toughening mechanisms necessary to cause fatigue in either ductile (e.g., metals) or brittle (e.g., ceramics and ordered intermetallics) materials. This letter presents experimental evidence for the cyclic fatigue of silicon via a conceptually different mechanism termed reaction-layer fatigue. Based on mechanical testing, electron microscopy, and self-assembled monolayers, we present direct observation of fatigue-crack initiation in polycrystalline silicon, the mechanism of crack initiation, and a method for altering fatigue damage accumulation.

How to cite this publication

Christopher L. Muhlstein, E.A. Stach, Robert O. Ritchie (2002). Mechanism of fatigue in micron-scale films of polycrystalline silicon for microelectromechanical systems. Applied Physics Letters, 80(9), pp. 1532-1534, DOI: 10.1063/1.1455142.

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Publication Details

Type

Article

Year

2002

Authors

3

Datasets

0

Total Files

0

Language

English

Journal

Applied Physics Letters

DOI

10.1063/1.1455142

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