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  5. High-cycle fatigue of single-crystal silicon thin films

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Article
English
2001

High-cycle fatigue of single-crystal silicon thin films

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English
2001
Journal of Microelectromechanical Systems
Vol 10 (4)
DOI: 10.1109/84.967383

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Robert O. Ritchie
Robert O. Ritchie

University of California, Berkeley

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Christopher L. Muhlstein
Stuart B. Brown
Robert O. Ritchie

Abstract

When subjected to alternating stresses, most materials degrade, e.g., suffer premature failure, due to a phenomenon known as fatigue. It is generally accepted that in brittle materials, such as ceramics, fatigue can only take place in toughened solids, i.e., premature fatigue failure would not be expected in materials such as single crystal silicon. The results of this study, however, appear to be at odds with the current understanding of brittle material fatigue. Twelve thin-film (/spl sim/20 /spl mu/m thick) single crystal silicon specimens were tested to failure in a controlled air environment (30/spl plusmn/0.1/spl deg/C, 50/spl plusmn/2% relative humidity). Damage accumulation and failure of the notched cantilever beams were monitored electrically during the "fatigue life" test. Specimen lives ranged from about 10 s to 48 days, or 1/spl times/106 to 1/spl times/1011 cycles before failure over stress amplitudes ranging from approximately 4 to 10 GPa. A variety of mechanisms are discussed in light of the fatigue life data and fracture surface evaluation.

How to cite this publication

Christopher L. Muhlstein, Stuart B. Brown, Robert O. Ritchie (2001). High-cycle fatigue of single-crystal silicon thin films. Journal of Microelectromechanical Systems, 10(4), pp. 593-600, DOI: 10.1109/84.967383.

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Publication Details

Type

Article

Year

2001

Authors

3

Datasets

0

Total Files

0

Language

English

Journal

Journal of Microelectromechanical Systems

DOI

10.1109/84.967383

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