Wrinkled‐Surface‐Induced Memristive Behavior of MoS₂ Wrapped GaN Nanowires

Abstract 1D memristors with nonvolatile memristive characteristics have large potential in brain‐like neuromorphic computation and digital logic circuits. Herein, a novel memristive device based on wrinkled MoS 2 wrapped GaN nanowires (NWs) with a spray‐coated Ag NWs network top electrode is described. The memristive device shows good stability/durability and retention characteristics for 798 cycles and 3.4 × 10 3 s, respectively, together with low switching voltages. A memristive model based on filament formation/rupture in the wrinkled surface of the NWs is proposed by analyzing the conductive characteristics and surface structure. Bipolar resistive switching is governed by the electric field associated with the wrinkled structure giving rise to migration of oxygen ions along the wrinkled surface of the NWs. The results enrich the knowledge pertaining to the design and optimization of memristors composed of NWs and also provide insights into the memristive behavior of memristors composed of 1D materials.