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Get Free AccessElectroluminescence from a nanowire array-based light emitting diode is reported. The junction consists of a p-type GaN thin film grown by metal organic chemical vapor deposition (MOCVD) and a vertical n-type ZnO nanowire array grown epitaxially from the thin film through a simple low temperature solution method. The fabricated devices exhibit diode like current voltage behavior. Electroluminescence is visible to the human eye at a forward bias of 10 V and spectroscopy reveals that emission is dominated by acceptor to band transitions in the p-GaN thin film. It is suggested that the vertical nanowire architecture of the device leads to waveguided emission from the thin film through the nanowire array.
Elaine Lai, Woong Kim, Peidong Yang (2008). Vertical nanowire array-based light emitting diodes. , 1(2), DOI: https://doi.org/10.1007/s12274-008-8017-4.
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Type
Article
Year
2008
Authors
3
Datasets
0
Total Files
0
Language
en
DOI
https://doi.org/10.1007/s12274-008-8017-4
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