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Get Free AccessA new approach for vectorial growth of single-wall carbon nanotube arrays is presented. The origin of growth is defined by patterning the catalyst nanoparticles, while the direction of growth is defined by a local electric field parallel to the substrate. Statistical analysis of the nanotube angular distribution indicates that field-directed growth can discriminate between metallic and semiconducting nanotubes during their formation. Vectorial growth could be used to produce nanotube-based circuitry for molecular electronics.
Ernesto Joselevich, Charles M. Lieber (2002). Vectorial Growth of Metallic and Semiconducting Single-Wall Carbon Nanotubes. Nano Letters, 2(10), pp. 1137-1141, DOI: 10.1021/nl025642u.
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Type
Article
Year
2002
Authors
2
Datasets
0
Total Files
0
Language
English
Journal
Nano Letters
DOI
10.1021/nl025642u
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