Synthesis of Zr Doped NiO Layers on NiSi2 Linling Gu/Si-MCP Structures for Supercapacitors

Three-dimensional super capacitors consisting of NiSi2/silicon micro channel plates (MCPs) with Zr doped NiO layers have been fabricated. The silicon MCPs produced by electrochemical etching is utilized as a backbone of the 3D structure. Nickle layer was deposited on silicon MCP by electro less chemical deposition. The active Zr doped NiO film and NiSi2 layer are synthesized on the surface of the Si-MCP by annealing the backbone coated by a Zr doped nickel layer under oxygen at 500°C. The multi-layered electrode materials are characterized by field emission scanning electron microscopy (FESEM) and the electrochemical properties are determined by cyclic voltammetry (CV). In addition, the electrochemical properties of the NiSi2/silicon MCP structure with pure NiO layers and the NiSi2silicon MCP structure with Zr doped NiO layers are compared.