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Get Free AccessMaterials with large perpendicular magnetic anisotropy (PMA) are candidates for spintronic devices, such as magnetic random-access memory, etc., due to their stable magnetic reference states. Because of shape anisotropy, the magnetic easy axis of oxide thin films favors in-plane orientation. In this Paper, we demonstrate a convenient means to control the magnetic anisotropy of ${\mathrm{Sr}\mathrm{Ru}\mathrm{O}}_{3}$ (SRO) ultrathin layers from in-plane to out-of-plane by capping with nonmagnetic materials. Tuning the anisotropy is achieved by imposition of symmetry mismatch at the interface-induced structural transition of SRO with suppressed octahedral tilt. These results suggest a potential direction for engineering magnetic oxide thin films with flexible tunable PMA using capping-layer-induced dissimilar symmetry.
Shan Lin, Qinghua Zhang, Manuel A. Roldán, Sujit Das, Timothy Charlton, M. R. Fitzsimmons, Qiao Jin, Sisi Li, Zhenping Wu, Shuang Chen, Haizhong Guo, Xin Tong, Meng He, Chen Ge, Can Wang, Lin Gu, Kuijuan Jin, Er‐Jia Guo (2020). Switching Magnetic Anisotropy of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>Sr</mml:mi><mml:msub><mml:mrow><mml:mi>Ru</mml:mi><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mn>3</mml:mn></mml:msub></mml:math> by Capping-Layer-Induced Octahedral Distortion. , 13(3), DOI: https://doi.org/10.1103/physrevapplied.13.034033.
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Type
Article
Year
2020
Authors
18
Datasets
0
Total Files
0
Language
lv
DOI
https://doi.org/10.1103/physrevapplied.13.034033
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