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  5. Strain Field Around Individual Dislocations Controls Failure

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Article
English
2024

Strain Field Around Individual Dislocations Controls Failure

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0 Files

English
2024
Small Methods
Vol 8 (12)
DOI: 10.1002/smtd.202400654

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Robert O. Ritchie
Robert O. Ritchie

University of California, Berkeley

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Christoph Gammer
Inas Issa
Andrew M. Minor
+2 more

Abstract

Understanding material failure on a fundamental level is a key aspect in the design of robust structural materials, especially for metals and alloys capable to undergo plastic deformation. In the last decade, significant progress is made in quantifying the stresses associated with failure in both experiments and simulations. Nonetheless, the processes occurring on the most essential level of individual dislocations that govern semi‐brittle and ductile fracture are still experimentally not accessible, limiting the failure prediction capabilities. Therefore, in the present work, a one‐of‐a‐kind nanoscale fracture experiment is conducted on a single crystalline Cr bending beam in situ in the transmission electron microscope and for the first time quantify the transient strains around individual dislocations, as well as of the whole dislocation network during crack opening. The results reveal the importance of both pre‐existing and newly emitted dislocations for crack‐tip shielding via their intrinsic strain field and provide guidelines to design more damage tolerant materials.

How to cite this publication

Christoph Gammer, Inas Issa, Andrew M. Minor, Robert O. Ritchie, Daniel Kiener (2024). Strain Field Around Individual Dislocations Controls Failure. Small Methods, 8(12), DOI: 10.1002/smtd.202400654.

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Publication Details

Type

Article

Year

2024

Authors

5

Datasets

0

Total Files

0

Language

English

Journal

Small Methods

DOI

10.1002/smtd.202400654

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