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  5. Resistive random-access memories using quasi-2D halide perovskites for wafer-scale reliable switching behaviors

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Article
en
2024

Resistive random-access memories using quasi-2D halide perovskites for wafer-scale reliable switching behaviors

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0 Files

en
2024
Vol 182
Vol. 182
DOI: 10.1016/j.mssp.2024.108718

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Ho Won Jang
Ho Won Jang

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Hyojung Kim
Min-ju Choi
Jun Min Suh
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How to cite this publication

Hyojung Kim, Min-ju Choi, Jun Min Suh, Young‐Seok Shim, In Hyuk Im, Daijoon Hyun, Seok Joo Yang, Zhicheng Cai, Muhammad Hilal, Mi Gyoung Lee‬, Cheon Woo Moon, Soo Young Kim, Ho Won Jang (2024). Resistive random-access memories using quasi-2D halide perovskites for wafer-scale reliable switching behaviors. , 182, DOI: https://doi.org/10.1016/j.mssp.2024.108718.

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Publication Details

Type

Article

Year

2024

Authors

13

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0

Total Files

0

Language

en

DOI

https://doi.org/10.1016/j.mssp.2024.108718

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