Magnetoresistance Oscillations in Vertical Junctions of 2D Antiferromagnetic Semiconductor <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>CrPS</mml:mi></mml:mrow><mml:mrow><mml:mn>4</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>

Magnetoresistance (MR) oscillations serve as a hallmark of intrinsic quantum behavior, traditionally observed only in conducting systems. Here we report the discovery of MR oscillations in an insulating system, the vertical junctions of CrPS4 which is a two-dimensional A-type antiferromagnetic semiconductor. Systematic investigations of MR peaks under varying conditions, including electrode materials, magnetic field direction, temperature, voltage bias, and layer number, elucidate a correlation between MR oscillations and spin-canted states in CrPS4. Experimental data and analysis point out the important role of the in-gap electronic states in generating MR oscillations, and we propose that spin selected interlayer hopping of localized defect states may be responsible for it. Our findings not only illuminate the unusual electronic transport in CrPS4 but also underscore the potential of van der Waals magnets for exploring interesting phenomena. Published by the American Physical Society 2024