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  5. Magnetoresistance and Anisotropic Spin Dynamics in Antiferromagnetic Semiconductor Eu$_5$Sn$_2$As$_6$

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Preprint
en
2024

Magnetoresistance and Anisotropic Spin Dynamics in Antiferromagnetic Semiconductor Eu$_5$Sn$_2$As$_6$

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0 Files

en
2024
DOI: 10.48550/arxiv.2407.06185arxiv.org/abs/2407.06185

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Joel Moore
Joel Moore

University of California, Berkeley

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R. P. Day
Kohtaro Yamakawa
Luke Pritchard Cairns
+4 more

Abstract

We report on the thermodynamic and transport properties of the rare-earth Zintl compound Eu$_5$Sn$_2$As$_6$, which orders as a canted antiferromagnetic magnetic semiconductor at 10.3~K. The system also displays a complex cascade of magnetic phases arising from geometric and magnetic exchange frustration, with high sensitivity to the application and direction of small magnetic fields. At low temperature, Eu$_5$Sn$_2$As$_6$ exhibits negative colossal magnetoresistance of up to a factor of $6\times10^3$. This may be a lower bound as the conductivity appears to be shunted by an unknown conduction channel, causing the resistivity to saturate. Mechanisms for the low temperature saturation of resistivity are discussed.

How to cite this publication

R. P. Day, Kohtaro Yamakawa, Luke Pritchard Cairns, John Singleton, Monica Allen, Joel Moore, James G. Analytis (2024). Magnetoresistance and Anisotropic Spin Dynamics in Antiferromagnetic Semiconductor Eu$_5$Sn$_2$As$_6$. , DOI: https://doi.org/10.48550/arxiv.2407.06185.

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Publication Details

Type

Preprint

Year

2024

Authors

7

Datasets

0

Total Files

0

Language

en

DOI

https://doi.org/10.48550/arxiv.2407.06185

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