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  5. Ion yield enhancement at the organic/inorganic interface in SIMS analysis using Ar-GCIB

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Article
English
2020

Ion yield enhancement at the organic/inorganic interface in SIMS analysis using Ar-GCIB

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English
2020
Applied Surface Science
Vol 536
DOI: 10.1016/j.apsusc.2020.147716

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Herman Terryn
Herman Terryn

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Vanina Cristaudo
Claude Poleunis
Priya Laha
+4 more

Abstract

Argon gas cluster ion beams (Ar-GCIBs) provide new opportunities for molecular depth profiling and imaging of organic materials and biological samples, thanks to recent technological developments that have led to the construction of new SIMS spectrometers where the traditional issues related to their low lateral resolution along with poor mass resolution and mass accuracy are overcome. The present fundamental contribution on SIMS molecular depth profiling investigates the variations of the secondary ion signals observed at the organic–inorganic hybrid interface when using Ar-GCIB as the analytical beam. With this in mind, depth profiling experiments were performed with a ToF-SIMS spectrometer using different analysis beams: 30-keV Bi5 + versus 10-keV Arn + with a cluster size (n) of 800, 1500, 3000 and 5000 atoms, respectively. A 10-keV Ar3000 + beam was used for sputtering in all the experiments. Irganox 1010 and model polymers such as polystyrene (PS) and poly (methyl methacrylate) (PMMA) oligomers were chosen. Silicon wafer and a polymer-based substrates were employed to test materials with different stiffness, which is directly related to their Young’s moduli, an important parameter in this study. Ar-GCIB depth profiles systematically show ion signal enhancement of the characteristic fragments of PS and Irganox 1010 when approaching the interface with the silicon substrate, that can reach up to 60% for [M1010-H]− in Irganox films deposited onto silicon wafers. This enhancement increases with increasing n in both ion polarities. These results point out some ionization effects on the observed signal enhancement at the interface. The experimental observations will be explained on the basis of the physics of the impact of large argon clusters on different target materials and the energy confinement of the ion projectile in the organic overlayers. Finally, the thickness of organic films on rigid substrates in the nanoscale appears to be a crucial parameter to dramatically improve the sensitivity to molecular fragments when using large Ar cluster ions as analysis beams.

How to cite this publication

Vanina Cristaudo, Claude Poleunis, Priya Laha, Pierre Eloy, Tom Hauffman, Herman Terryn, Arnaud Delcorte (2020). Ion yield enhancement at the organic/inorganic interface in SIMS analysis using Ar-GCIB. Applied Surface Science, 536, pp. 147716-147716, DOI: 10.1016/j.apsusc.2020.147716.

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Publication Details

Type

Article

Year

2020

Authors

7

Datasets

0

Total Files

0

Language

English

Journal

Applied Surface Science

DOI

10.1016/j.apsusc.2020.147716

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