Interface Engineering of Ge-based Nanoelectronics Using Fluorinated Graphene

Ge is a promising candidate to replace Si in future low-power logic applications. However, the unstable germanium oxide formed at the interface between the channel and dielectric layer has impeded the progress of Ge-based nanoelectronics. We discover the insulating fluorinated graphene can be employed as an efficient diffusion barrier layer to suppress the formation of the unstable interfacial oxide in Ge-based devices. The Ge-based device with the fluorinated graphene exhibits negligible capacitance versus voltage hysteresis, extremely low leakage, and superior equivalent oxide thickness.