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  5. In‐Plane Heterostructured MoN/MoC Nanosheets with Enhanced Interfacial Charge Transfer for Superior Pseudocapacitive Storage

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Article
en
2023

In‐Plane Heterostructured MoN/MoC Nanosheets with Enhanced Interfacial Charge Transfer for Superior Pseudocapacitive Storage

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en
2023
Vol 34 (12)
Vol. 34
DOI: 10.1002/adfm.202311040

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Paul Kim Ho Chu
Paul Kim Ho Chu

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Cheng Wang
Xiuli Li
Hao Song
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Abstract

Abstract 2D transition metal carbide/nitride heterostructures are emerging pseudocapacitive materials for supercapacitors (SCs); however, the lack of efficient synthesis methods and an in‐depth understanding of the pseudocapacitive storage mechanism of these potentially important materials impede their applications in SCs. Herein, 2D MoN/MoC nanosheets with a precisely regulated interface are prepared controllably by a scalable salt‐assisted method with bulk MoS 2 as the precursor. In operando infrared spectroscopy and electrochemical quartz crystal microbalance results reveal that the pseudocapacitance of the MoN/MoC nanosheets originates from the reversible reaction between Mo–N sites and H + in the acidic electrolyte. Density‐functional theory calculations and X‐ray photoelectron spectroscopy disclose that the MoC/MoN heterointerface induces the internal electric field from the accumulated negative charges at the Mo–N sites by electron donation from MoC, leading to enhanced H + adsorption at the Mo–N sites and superior pseudocapacitive storage. The heterostructured MoN/MoC nanosheets show a large volumetric capacity of 1045.3 F cm −3 at 1 A cm −3 , high‐rate capability of 702.8 F cm −3 at 10 A cm −3 , and superior cyclability with capacity retention of 98% after 10,000 cycles, which outperform reported Mo‐based carbides and nitrides. The results provide new insights into the development of high‐performance 2D heterostructured materials for superior pseudocapacitive storage.

How to cite this publication

Cheng Wang, Xiuli Li, Hao Song, Paul Kim Ho Chu, Kaifu Huo (2023). In‐Plane Heterostructured MoN/MoC Nanosheets with Enhanced Interfacial Charge Transfer for Superior Pseudocapacitive Storage. , 34(12), DOI: https://doi.org/10.1002/adfm.202311040.

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Publication Details

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Article

Year

2023

Authors

5

Datasets

0

Total Files

0

Language

en

DOI

https://doi.org/10.1002/adfm.202311040

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