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Get Free AccessIndium nanowires are grown on InGaN substrates at an ultrafast rate by using direct irradiation by a focused ion beam (see figure). The diameter and length of the synthesized nanowires, as well as their growth rate, can be effectively controlled by selecting the energy of the ion beam. Nanowires are synthesized on selected areas of the substrate by controlling the regions exposed to the ion beam using maskless patterning.
Seung Soo Oh, Do Hyun Kim, Myoung‐Woon Moon, Ashkan Vaziri, Miyoung Kim, Euijoon Yoon, Kyu Hwan Oh, John W. Hutchinson (2008). Indium Nanowires Synthesized at an Ultrafast Rate. Advanced Materials, 20(6), pp. 1093-1098, DOI: 10.1002/adma.200702134.
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Type
Article
Year
2008
Authors
8
Datasets
0
Total Files
0
Language
English
Journal
Advanced Materials
DOI
10.1002/adma.200702134
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