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Get Free AccessA 75nm Si 0.84 Ge 0.16 film was grown at 500°C with Si 2 H 6 and GeH 4 precursors. After depositing an oxide layer on the top, the samples were implanted with [Formula: see text] ions at an energy of 38keV, and a dose of 3.5 × 10 16 cm -2 . These implanted samples were annealed in the temperature range from 400°C to 700°C. H redistribution occurs during this process. Meanwhile, great tensile strain was introduced by implantation into the SiGe/Si heterostructure layers and following annealing relieved the strain. High temperature annealing almost fully relaxed the SiGe layer.
Zhenghua An, Chuanling Men, Weili Liu, Miao Zhang, Yanjun Wu, Xinyun Xie, Paul Kim Ho Chu, Chenglu Lin (2002). H DISTRIBUTION AND STRAIN EVOLUTION IN SiGe/Si HETEROSTRUCTURE IMPLANTED BY H DIMERS. , 16(28n29), DOI: https://doi.org/10.1142/s0217979202015078.
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Type
Article
Year
2002
Authors
8
Datasets
0
Total Files
0
Language
en
DOI
https://doi.org/10.1142/s0217979202015078
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