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Get Free AccessWe have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our measurements show that mobilities higher than 200 000 cm2/V s are achievable, if extrinsic disorder is eliminated. A sharp (thresholdlike) increase in resistivity observed above approximately 200 K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intraripple flexural phonons.
С. В. Морозов, Konstantin ‘kostya’ Novoselov, M. I. Katsnelson, F. Schedin, D. C. Elias, John A. Jaszczak, A. K. Geǐm (2008). Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer. Physical Review Letters, 100(1), DOI: 10.1103/physrevlett.100.016602.
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Type
Article
Year
2008
Authors
7
Datasets
0
Total Files
0
Language
English
Journal
Physical Review Letters
DOI
10.1103/physrevlett.100.016602
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