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  5. Exchange Energy of the Ferromagnetic Electronic Ground State in a Monolayer Semiconductor

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Article
en
2024

Exchange Energy of the Ferromagnetic Electronic Ground State in a Monolayer Semiconductor

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en
2024
Vol 133 (2)
Vol. 133
DOI: 10.1103/physrevlett.133.026501

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Kenji Watanabe
Kenji Watanabe

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Nadine Leisgang
Dmitry Miserev
Hinrich Mattiat
+6 more

Abstract

Mobile electrons in the semiconductor monolayer MoS_{2} form a ferromagnetic state at low temperature. The Fermi sea consists of two circles: one at the K point, the other at the K[over ˜] point, both with the same spin. Here, we present an optical experiment on gated MoS_{2} at low electron density in which excitons are injected with known spin and valley quantum numbers. The resulting trions are identified using a model which accounts for the injection process, the formation of antisymmetrized trion states, electron-hole scattering from one valley to the other, and recombination. The results are consistent with a complete spin polarization. From the splittings between different trion states, we measure the exchange energy Σ, the energy required to flip a single spin within the ferromagnetic state, as well as the intervalley Coulomb exchange energy J. We determine Σ=11.2 meV and J=5 meV at n=1.5×10^{12} cm^{-2} and find that J depends strongly on the electron density n.

How to cite this publication

Nadine Leisgang, Dmitry Miserev, Hinrich Mattiat, Lukas Schneider, Lukas Sponfeldner, Kenji Watanabe, Takashi Taniguchi, Martino Poggio, Richard J. Warburton (2024). Exchange Energy of the Ferromagnetic Electronic Ground State in a Monolayer Semiconductor. , 133(2), DOI: https://doi.org/10.1103/physrevlett.133.026501.

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Publication Details

Type

Article

Year

2024

Authors

9

Datasets

0

Total Files

0

Language

en

DOI

https://doi.org/10.1103/physrevlett.133.026501

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