Estimation of dual-junction solar cell characteristics using neural networks

We propose a neural network (NN)-based modeling technique for estimation of behavior of dual-junction (DJ) GaInP/GaAs solar cells involving complex phenomena, e.g., tunneling effect and complex interactions between the junctions. With extensive computer simulations we have compared performance of NN-based models with that of a sophisticated device simulator, ATLAS form Silvaco. We have shown that the NN-based models are able to estimate the solar cell characteristics close to that of the experimentally measured response. Compared with the response from ATLAS-based models, the NN-based models provide better results in estimation of tunneling phenomenon, determination of external quantum efficiency and I-V characteristics of DJ solar cells.