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  5. Electrical Transport Properties of Oligothiophene-Based Molecular Films Studied by Current Sensing Atomic Force Microscopy

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Article
en
2011

Electrical Transport Properties of Oligothiophene-Based Molecular Films Studied by Current Sensing Atomic Force Microscopy

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en
2011
Vol 11 (10)
Vol. 11
DOI: 10.1021/nl202720y

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Jean Mj Frechet
Jean Mj Frechet

University of California, Berkeley

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Bas L. M. Hendriksen
Florent Martin
Yabing Qi
+10 more

Abstract

Using conducting probe atomic force microscopy (CAFM) we have investigated the electrical conduction properties of monolayer films of a pentathiophene derivative on a SiO(2)/Si-p+ substrate. By a combination of current-voltage spectroscopy and current imaging we show that lateral charge transport takes place in the plane of the monolayer via hole injection into the highest occupied molecular orbitals of the pentathiophene unit. Our CAFM data suggest that the conductivity is anisotropic relative to the crystalline directions of the molecular lattice.

How to cite this publication

Bas L. M. Hendriksen, Florent Martin, Yabing Qi, Clayton Mauldin, Nenad Vukmirović, Junfeng Ren, Herbert Wormeester, Allard J. Katan, Virginia Altoé, Shaul Aloni, Jean Mj Frechet, Lin‐Wang Wang, Miquel Salmerón (2011). Electrical Transport Properties of Oligothiophene-Based Molecular Films Studied by Current Sensing Atomic Force Microscopy. , 11(10), DOI: https://doi.org/10.1021/nl202720y.

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Publication Details

Type

Article

Year

2011

Authors

13

Datasets

0

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0

Language

en

DOI

https://doi.org/10.1021/nl202720y

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