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  5. Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors

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Article
en
2019

Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors

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0 Files

en
2019
Vol 364 (6439)
Vol. 364
DOI: 10.1126/science.aaw8053

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Eli Yablonovitch
Eli Yablonovitch

University of California, Berkeley

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Der‐Hsien Lien
Shiekh Zia Uddin
Matthew Yeh
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Abstract

Electrostatic doping boosts emission Although monolayers of transition-metal dichalcogenides such as molybdenum disulfide (MoS 2 ) and tungsten disulfide (WS 2 ) should exhibit strong photoluminescence, in practice, defects in these materials can lead to very low quantum yields (less than 1%). Lien et al. show that as-formed MoS 2 and WS 2 monolayers encapsulated in poly(methyl methacrylate) can be electrostatically doped to achieve quantum yields near unity. Under these conditions, instead of charged trion species that recombine nonradiatively, only neutral excitons that recombine emissively form. These results help explain why coating these materials with certain Lewis acids also boosts the quantum yield. Science , this issue p. 468

How to cite this publication

Der‐Hsien Lien, Shiekh Zia Uddin, Matthew Yeh, Matin Amani, Hyung‐Jin Kim, Joel W. Ager, Eli Yablonovitch, Ali Javey (2019). Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors. , 364(6439), DOI: https://doi.org/10.1126/science.aaw8053.

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Publication Details

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Article

Year

2019

Authors

8

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0

Total Files

0

Language

en

DOI

https://doi.org/10.1126/science.aaw8053

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