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  5. Electric field controllable high-spin <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>SrRu</mml:mi><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math> driven by a solid ionic junction

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Article
lv
2020

Electric field controllable high-spin <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>SrRu</mml:mi><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math> driven by a solid ionic junction

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lv
2020
Vol 101 (21)
Vol. 101
DOI: 10.1103/physrevb.101.214401

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Lin Gu
Lin Gu

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Jingdi Lu
Liang Si
Xiefei Yao
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Abstract

A high-spin ruthenate phase is achieved at the SrRuO${}_{3}$/SrTiO${}_{3}$ interface via a solid ionic chemical junction, which benefits from the distinct formation energies and diffusion barriers of oxygen vacancies across the heterostructure. This high-spin SrRuO${}_{3}$ phase can be reversibly switched by electric field in a solid-state ionic gating device, providing a framework for atomic design of controllable functionalities in strongly correlated oxides using solid-chemistry tools.

How to cite this publication

Jingdi Lu, Liang Si, Xiefei Yao, Chengfeng Tian, Jing Wang, Qinghua Zhang, Zhengxun Lai, Iftikhar Ahmed Malik, Xin Liu, Peiheng Jiang, Kejia Zhu, Youguo Shi, Zhenlin Luo, Lin Gu, Karsten Held, Wenbo Mi, Zhicheng Zhong, Ce‐Wen Nan, Jinxing Zhang (2020). Electric field controllable high-spin <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>SrRu</mml:mi><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math> driven by a solid ionic junction. , 101(21), DOI: https://doi.org/10.1103/physrevb.101.214401.

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Publication Details

Type

Article

Year

2020

Authors

19

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0

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0

Language

lv

DOI

https://doi.org/10.1103/physrevb.101.214401

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