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  5. Design and Performance of the 850-V 100-kW 16-kHz Bidirectional Isolated DC–DC Converter Using SiC-MOSFET/SBD H-Bridge Modules

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Article
English
2020

Design and Performance of the 850-V 100-kW 16-kHz Bidirectional Isolated DC–DC Converter Using SiC-MOSFET/SBD H-Bridge Modules

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English
2020
IEEE Transactions on Power Electronics
Vol 35 (10)
DOI: 10.1109/tpel.2020.2975256

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Hirofumi Akagi
Hirofumi Akagi

Tokyo Institute of Technology

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Ryo Haneda
Hirofumi Akagi

Abstract

This article designs, builds, and tests the 850-V 100-kW 16-kHz bidirectional isolated dc-dc converter using the latest 1.2-kV 400-A SiC-MOSFET/SBD H-bridge modules, with focus on efficiency improvement. Here, SBD stands for Schottky barrier diode. It proposes intermittent operation with continuous-current mode (CCM), to reduce switching losses in partial loads. Experimental results verify that the conversion efficiency from the dc input to the dc output is as high as 99.3% at the rated power of 100 kW, and 99.2% at a partial load of 10 kW. These are measured and calculated, discarding auxiliary power losses of 82W in total, which are produced by the digital controller, gate-drive circuits, and cooling fans. Experimental transient waveforms show that no dc magnetic flux is included in the 850-V 100-kW 16-kHz transformer at intervals of switchover between the continuous operation and the CCM intermittent operation when power reversal from -100 to 100 kW is performed at an interval of 1 ms. Finally, this article presents an experimental and theoretical discussion on the voltage ripples appearing across the dc capacitor of each bridge.

How to cite this publication

Ryo Haneda, Hirofumi Akagi (2020). Design and Performance of the 850-V 100-kW 16-kHz Bidirectional Isolated DC–DC Converter Using SiC-MOSFET/SBD H-Bridge Modules. IEEE Transactions on Power Electronics, 35(10), pp. 10013-10025, DOI: 10.1109/tpel.2020.2975256.

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Publication Details

Type

Article

Year

2020

Authors

2

Datasets

0

Total Files

0

Language

English

Journal

IEEE Transactions on Power Electronics

DOI

10.1109/tpel.2020.2975256

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