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Get Free AccessWe demonstrate low surface recombination velocity (~8700 cm/s) and reduction of non-radiative lifetime in an InP/InGaAs nanoscale light emitting diode using a sacrificial Al2O3 layer. We predict high efficiency operation after modest enhancement of spontaneous emission rate with an optical antenna.
Seth A. Fortuna, Christopher Heidelberger, Nicolas M. Andrade, Eli Yablonovitch, Ming C. Wu (2017). Controlling surface recombination in a nanoscale III-V light emitting diode. , 99, DOI: https://doi.org/10.1109/ipcon.2017.8115993.
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Type
Article
Year
2017
Authors
5
Datasets
0
Total Files
0
Language
en
DOI
https://doi.org/10.1109/ipcon.2017.8115993
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