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Get Free AccessIn article number 1700929, by Peng Zhou, Zengfeng Di, and co-workers, graphene with the desired pattern is produced on arbitrary dielectric substrates by a semiconducting, germanium-assisted, chemical vapor deposition approach, in which the complete sublimation of the catalytic Ge layer occurs during or immediately after the formation of the monolayer graphene.
Ziwen Wang, Zhongying Xue, Miao Zhang, Yongqiang Wang, Xiaoming Xie, Paul Kim Ho Chu, Peng Zhou, Zengfeng Di, Xi Wang (2017). Graphene: Germanium-Assisted Direct Growth of Graphene on Arbitrary Dielectric Substrates for Heating Devices (Small 28/2017). , 13(28), DOI: https://doi.org/10.1002/smll.201770150.
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Type
Article
Year
2017
Authors
9
Datasets
0
Total Files
0
Language
en
DOI
https://doi.org/10.1002/smll.201770150
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