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Get Free AccessElectron field emitters that provide intense and stable currents are important to vacuum microelectronic devices. In this work, we demonstrate high-performance electron field emission (FE) from nanostructured AlGaN/GaN quantum wells by coupling the quantum and geometric effects. Pulsed laser deposition is utilized to fabricate the FE cathode. The field emitter exhibits a low threshold field of only 1.1 V/μm and yields a stable emission current of 5 mA/cm2 at 1.8 V/μm, making it suitable for FE-based applications.
Wei Zhao, Ru‐Zhi Wang, Xuemei Song, Hao Wang, Bo Wang, Hui Yan, Paul Kim Ho Chu (2011). Electron field emission enhanced by geometric and quantum effects from nanostructured AlGaN/GaN quantum wells. , 98(15), DOI: https://doi.org/10.1063/1.3581043.
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Type
Article
Year
2011
Authors
7
Datasets
0
Total Files
0
Language
en
DOI
https://doi.org/10.1063/1.3581043
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